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CBSE Questions for Class 12 Medical Physics Semiconductor Electronics: Materials, Devices And Simple Circuits Quiz 2 - MCQExams.com
CBSE
Class 12 Medical Physics
Semiconductor Electronics: Materials, Devices And Simple Circuits
Quiz 2
In a $$p-n-p$$ transistor the base is the n-region. Its width relative to the p-regions is
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smaller
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larger
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same
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not related
Explanation
In a $$p-n-p$$ transistor the base is the n-region. Its
width relative to the p-regions is smaller since in transistors the base is made very thin.
In positive logic, the logic state $$1$$ corresponds to
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positive voltage
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zero voltage
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lower voltage level
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higher voltage level
Explanation
In digital logic, higher voltage is defined as logic state '$$1$$' and lower voltage is defined as logic state '$$0$$'. The higher voltage need not necessarily be positive. For example, it is possible that state '$$0$$' is defined as $$-10\ V$$ and state '$$1$$' is defined as $$-5\ V$$.
In Boolean algebra, $$A + B = Y$$ implies that
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sum of $$A$$ and $$B$$ is $$Y$$.
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$$Y$$ exists when $$A$$ exists or $$B$$ exists or both $$A$$ and $$B$$ exist.
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$$Y$$ exists only when $$A$$ and $$B$$ both exist.
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$$Y$$ exists when $$A$$ or $$B$$ exist but not when both $$A$$ and $$B$$ exist.
Explanation
In Boolean algebra, $$A + B = Y$$ implies that $$Y$$ exists when $$A$$ exists or $$B$$ exists or both $$A$$ and $$B$$ exist.
In a transistor the base is made very thin and is lightly doped with an impurity, because
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to enable the collector to collect about $$95\%$$ of the holes or electrons coming from the emitter side
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to enable the emitter to emit small number of holes or electrons
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to save the transistors from high current effects
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to enable the base to collect about $$95\%$$ of holes or electrons coming from the emitter side
Explanation
In a transistor the base is made very thin and is lightly doped with an impurity, so as
to enable the collector to collect about $$95\%$$ of the holes or electrons coming from the emitter side.
A p-n-p transistor is said to be in active region of operation when
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both emitter junction and collector junction are forward biased.
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both emitter junction and collector junction are reverse biased.
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emitter junction is forward biased and collector junction is reverse biased.
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emitter junction is reverse biased and collector junction is forward biased.
Explanation
When emitter junction is forward biased and collector junction is reverse biased then a p-n-p transistor is said to be in active region of operation.
The part of a trasistor which is heavily doped to produce large number of majority carriers is :
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emitter
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base
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collector
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can be any of the above three
Explanation
In transistors emitter is heavily doped as compared to base and collector, in order to
produce large number of majority carriers.
Which of the following is not the function of a NOT gate?
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Stop a signal.
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Invert an input signal.
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Complement a signal.
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Change the logic in a digital circuit.
Explanation
A NOT gate inverts the input signal which is the same as complementing a signal or changing the logic in a digital circuit. This means that when the input to the NOT gate is logic '$$0$$', the output is logic '$$1$$'. However, it does not stop a signal.
When an input signal $$1$$ is applied to a NOT gate, its output is
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$$1$$
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$$0$$
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either $$0$$ or $$1$$
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both $$0$$ and $$1$$
Explanation
NOT gate yields the reverse of the input signal in output, thus when an input signal $$1$$ is applied to a NOT gate,
its output is $$0$$.
The symbol represents
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NOT gate
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OR gate
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AND gate
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NOR gate
Explanation
The symbol represented above by definition is of NAND gate which gives output only when both the input signals are low i.e $$0$$
A transistor has a base current of $$1\ mA$$ and emitter current $$100\ mA$$. The current transfer ratio will be
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$$0.9$$
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$$0.99$$
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$$1.1$$
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$$10.1$$
Explanation
Given that:
$$ I_b = 1\ mA, $$
$$ I_e = 100\ mA $$
Hence, $$ I_c = I_e - I_b = 100 - 1 = 99\ mA $$
Current transfer ratio is $$\dfrac{I_c}{I_e} = \dfrac {99}{100} = 0.99$$
An AND gate is followed by a NOT gate in series. With two inputs $$A$$ & $$B$$, the Boolean expression for the out put $$Y$$ will be :
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$$A.B$$
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$$A + B$$
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$$\overline{A+B}$$
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$$\overline{A.B}$$
Explanation
Expression for AND is $$A.B$$ and if it is followed by a NOT gate then the Boolean expression will just be the complement of AND.
The gate that has only one input terminal
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NOT
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NOR
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NAN
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XOR
Explanation
Only one logic gate has one input terminal i.e. NOT gate.
In Boolean algebra $$A.B = Y$$ implies that :
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product of $$A$$ and $$B$$ is $$Y$$
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$$Y$$ exists when $$A$$ exists or $$B$$ exists
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$$Y$$ exists when both $$A$$ and $$B$$ exist but not when only $$A$$ or $$B$$ exists
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$$Y$$ exists when $$A$$ or $$B$$ exists but not both $$A$$ and $$B$$ exist.
Explanation
In Boolean algebra $$A.B = Y$$ implies that $$Y$$ exists when both $$A$$ and $$B$$ exist but not when only $$A$$ or $$B$$ exists.
In the Boolean algebra, the following one is wrong
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$$1 + 0 = 1$$
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$$0 + 1 = 1$$
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$$1 + 1 = 1$$
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$$0 + 0 = 1$$
Explanation
In the Boolean algebra, binary addition is given as:
$$1 + 0 = 1$$
$$0 + 1 = 1$$
$$1 + 1 = 1$$
Hence, $$0 + 0 = 1$$ is wrong.
The output of a 2-input OR gate is zero only when its
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both inputs are $$0$$.
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either input is $$1$$.
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both inputs are $$1$$.
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either input is $$0$$.
Explanation
The truth table for 2-input OR gate is as shown in the figure. Thus, the output is zero only when both inputs are zero.
NOR gate is the series combination of
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NOT gate followed by OR gate.
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OR gate followed by NOT gate.
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AND gate followed by OR gate.
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OR gate followed by AND gate.
Explanation
Truth table of NOR is complement of OR. That's why NOR is combination of OR gate followed by NOT gate.
The following truth table is for :
A
B
Y
1
1
0
1
0
1
0
1
1
0
0
1
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NAND gate
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AND gate
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XOR gate
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NOT gate
Explanation
The output is 0 only when the two inputs are 1.
The output is 1 when any of the input is zero.
This is the characteristic of a NAND gate.
If $$A = B = 1$$, then in terms of Boolean algebra the value of $$A.B + A$$ is not equal to
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$$B.A+B$$
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$$B+A$$
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$$B$$
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$$\bar{A}.B$$
Explanation
For $$A = B = 1$$,
$$\Rightarrow A.B+B = 1.1 + 1 = 1 + 1 = 1$$
Therefore,
(A) $$B.A+B = 1.1 + 1 = 1 + 1 = 1$$
(B) $$B+A = 1 + 1 = 1$$
(C) $$B = 1$$
(D) $$ \bar A.B=1.1+1 = \bar 1.1 = 0.1 = 0$$
Hence, option D is the correct answer.
In the Boolean algebra, of the following one which is not equal to $$A$$ is
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$$A.A$$
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$$A + A$$
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$$\bar{A}.A$$
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$$\overline{\bar A + \bar A}$$
Explanation
The truth table for AND gate is given as shown in the figure.
When $$A$$ is true, $$\bar{A}$$ is false and vice versa.
Hence value of $$\bar{A}.A$$ is always false(looking at the second and third row of the table) which is not equal to $$A$$.
Hence, option C is the answer.
In the Boolean algebra : $$A + B =$$
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$$\bar{A}$$+$$\bar{B}$$
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A.B
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$$\bar{\bar{A}}+\bar{\bar{B}}$$
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$$\bar{\bar{A}}$$+$$\bar{B}$$
Explanation
Input
$$\bar A+\bar B$$
$$A.B$$
$$\bar{\bar A} + \bar{\bar B}$$
$$\bar {\bar A} + \bar B$$
$$A=B=0$$
1
0
0
1
$$A=B=1$$
0
1
1
1
$$A=0, B=1$$
1
0
1
1
$$A=1, B=0$$
1
0
1
1
A change of $$400\ mV$$ in base-emitter voltage causes a change of $$200$$$$\mu A $$ in the base current. The input resistance of the transistor is
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$$1K$$$$\Omega $$
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$$6K$$$$\Omega $$
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$$2K$$$$\Omega $$
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$$8K$$$$\Omega $$
Explanation
Given that:
$$V_{BE} = 400\ mV = 4 \times 10^{-1} V$$
$$I_B = 200\; \mu A = 2 \times 10^{-4} A$$
The
input resistance of the transistor is
$$r_i = \dfrac {V_{BE}}{I_B}$$
$$r_i = \dfrac {4 \times 10^{-1}}{2 \times 10^{-4}}$$
$$r_i = 2 \times 10^{3} = 2 K\Omega$$
For a p-n-p transistor in CB configuration, the emitter current $$I_{E}$$ is $$1\ mA$$ and $$\alpha $$ $$=$$$$0.95$$. The base current and collector current are
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$$0.95\ mA, 0.05\ mA$$
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$$0.05\ mA , 0.95\ mA$$
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$$9.5\ mA, 0.5\ mA$$
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$$0.5\ mA, 9.5\ mA$$
Explanation
Given that:
$$I_e = 1\ mA$$
$$\alpha = 0.95$$
For transistor in CB mode,
$$\alpha = \dfrac{I_c}{I_e}$$
$$I_c = \alpha I_e = (0.95)(1) = 0.95\ mA$$
Also, for transistors
$$I_e = I_b + I_c$$
$$I_b =I_e - I_c = 1 - 0.95 = 0.05\ mA$$
If $$A = 1$$ and $$B = 0$$, then in terms of Boolean algebra the value of $$A.A + B$$ is
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$$A$$
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$$B^2$$
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$$B$$
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$$A \cdot B$$
Explanation
For $$A=1$$ and $$B=0$$
$$A.A+B=1.1+0=1$$
Hence, $$A.A+B=A$$
............(since, $$A=1$$)
If $$A = 1, B = 0$$ then the value of $$\bar {A} + B $$ in terms of Boolean algebra is
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$$A$$
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$$B$$
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$$B + A$$
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$$A.\bar{B}$$
Explanation
For $$A = 1, B = 0$$
$$\bar A+B = \bar 1 + 0 = 0 + 0 = 0$$
Hence,
$$\bar A+B = B$$ .............(since, $$B= 0$$)
The following one represents logic addition is
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$$1 + 1 = 2$$
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$$1 + 1 = 10$$
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$$1 + 1 = 1$$
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$$1 + 1 = 11$$
Explanation
Logic addition is the addition of binary numbers, it is represented by
$$1 + 1 = 1$$
The value of $$\alpha $$ of a transistor is $$0.9$$. The change in the collector current corresponding to a change of $$4\ mA$$ in the base current in a common emitter arrangement is
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$$36\ mA$$
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$$72\ mA$$
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$$18\ mA$$
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$$54\ mA$$
Explanation
Given that:
$$\alpha = 0.9$$
$$I_b = 4\ mA$$
For transistors,
$$\beta = \dfrac{\alpha}{1-\alpha}$$
$$\beta = \dfrac{0.9}{1-0.9} = \dfrac{0.9}{0.1} = 9$$
Also,
$$\beta = \dfrac {I_c}{I_b}$$
$$I_c = \beta I_b = (9)(4) = 36\ mA$$
In the Boolean algebra : $$\bar{A} . \bar{B}=$$ ......
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$$\overline{A+B}$$
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$$A.B$$
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$$\overline{\bar A + \bar B}$$
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$$A + B$$
Explanation
Input
$$\bar {A}.\bar {B} $$
$$\overline {A+B}$$
A.B
$$\overline {\bar A+\bar B}$$
A+B
$$A=B=0$$
1
1
0
0
0
$$A=B=1$$
0
0
1
1
1
$$A=0, B=1$$
0
0
0
1
1
$$A=1, B=0$$
0
0
0
1
1
The output of OR gate is 1 :-
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If either one or both inputs are 1
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Only if both inputs are 1
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If either input is zero
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If both inputs are zero
Explanation
At least one input required to activate $$or -gate$$
Option A
Identify the logic gate in figure.
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NAND
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NOR
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NOT
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AND
Explanation
The symbol of circle shown in figure with OR gate indicates the NOT gate hence, given gate is NOR gate.
The truth table for NOT gate is
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Explanation
NOT gate gives the reverse of the input as output. Truth table for NOT gate is:
Input
Output
$$1$$
$$0$$
$$0$$
$$1$$
The logic expression which is NOT true in Boolean algebra is
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$$[\bar{1}+\bar{1}].1=0$$
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$$[\bar{1}+0].1=0$$
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$$[\bar{1}+0].\bar{1}=0$$
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$$[1+1].1=0$$
Explanation
$$[\bar 1+\bar 1].1= [0+0].1 = 0$$
$$[\bar 1+0].1= [0+0].1 = 0$$
$$[\bar 1+0].\bar 1= [0+0].0 = 0$$
$$[1.1].1 = 1.1 = 1 \neq 0$$
Which one of the following statement is false
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Work is a state finction
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temperature is a state function
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Change in the state is completely defined when the initial and final states are specified
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Work appears at the boundary of the system
Explanation
Majority carrier in a $$n-$$ type semiconductor are holes.This statement is false.
Since,in $$n-$$type semiconductor, the pentavalent impurity atoms donate electrons o the host crystal and the semiconductor doped with donars (pentavalent impurity) is called $$n-$$type semiconductor.
Therefore majority carrier in a $$n-$$type semiconductor are electrons
The device that can act as a complete electronic circuit is -
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Junction diode
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Integrated circuit
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Junction transistor
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Zener diode
Explanation
Integrated circuit is a set of electronic circuits on one small flat piece of semiconductor material, normally silicon. So, it forms a complete electronic circuit.
Boolean Expression for the gate circuit shown in the figure is
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$$A. 1 = A$$
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$$A.\bar{A}=0$$
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$$A.A = A$$
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$$A.0 = 0$$
Explanation
The input $$A$$ directly goes into the AND gate and also first passes through NOT gate, giving another input of $$\bar{A}$$ to the AND gate.
$$A.\bar{A}=0$$ since atleast one of $$A$$ and $$\bar{A}$$ is $$0$$.
NAND gate in the following is
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0%
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0%
Explanation
logic gate NAND is used to reverse the multiplication of the input signals. Hence, by connecting NOT gate after AND gate we get the NAND gate.
The logic gate having following truth table is
A B Y
0 0 1
0 1 1
1 0 1
1 1 0
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XOR
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OR
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AND
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NAND
Explanation
From truth table it is clear that output is high for either one or two low inputs, hence it is the reverse of the condition for AND gate i.e. output is low for either one or two high inputs . Hence, given truthtable is for NAND gate.
Why are LEDs extensively used to replace bulbs?
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(i) and (ii) only
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(ii) and (iii) only
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(iii) and (i) only
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(i), (ii) and (iii)
Semiconductors are generally made up of which substance?
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Silicon
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Carbon
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Phosphorus
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Boron
Explanation
Semiconductors are made of Si, generally. Because Si is the second most abundant element in earth's crust after oxygen and is less expensive than other semiconductors used in intrinsic semiconductors.
The device which produces highly coherent sources is
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Fresnel bi-prism
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Young's double slit
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LASER
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Lloyd's mirror
Explanation
Two sources are said to be coherent if they have exactly same frequency, and have zero or constant phase difference.
Laser is a coherent source i.e. constituent multiple sources inside the laser are phase-locked.
Hence laser produces highly coherent sources.
In an intrinsic semiconductor, the number of electrons in the conduction band is ________ the number of holes in the valence band.
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equal to
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less than
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greater than
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none of these
Explanation
In an intrinsic semiconductor, the number density of electrons is equal to the number density of holes i.e $$ne=nh$$.
Since there is no doping, no extra hole or electron is produced.
Given figure is the symbol, for which component of a circuit?
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LED
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Rheostat
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Transistor
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Resistor
Explanation
The given symbol is of $$transistor$$ in electric circuit.
Answer-(C)
Which are good conductors ?
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silicon
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Silver
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copper
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glass
Explanation
Conductors are materials that permit electrons to flow freely from particle to particle. An object made of a conducting material will permit charge to be transferred across the entire surface of the object.
Hence, the statement is true as silver and copper are good conductors of electricity.
The energy gap in glass at room temperature is
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Greater than that in a semiconductor.
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Less than that in a good conductor.
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Greater than that in a good conductor.
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Both (1) and (3) are true.
Explanation
Glass is an insulator. The energy gap in a glass is greater than that of semiconductor and a good conductor.
Materials which allow only larger currents to flow through them are
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Insulators
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Semi-conductors
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Conductors
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Alloys
Explanation
Semiconductors in their natural state are poor conductors because a current requires the flow of electrons, and semiconductors have their valence band filled, preventing the entry flow of new electrons. Thus semi-conductors allows a large current to pass through them.
In an intrinsic semiconductor, if $$N_e$$ is the number of electrons in the conduction band and $$N_p$$ is the number of holes in the valence band then.
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$$N_e > N_p$$
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$$N_e = N_p$$
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$$N_e < N_p$$
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None of the above
Explanation
In an intrinsic semiconductor, the number of electrons in the conduction band is equal to the number of holes in the valence band, so $$N_{e}=N_{p}$$.
The Wavelength of a LASER beam can be used as a standard of
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time
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temperature
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angle
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length
Explanation
LASER beam has a standard wavelength. Hence it can be used as a measure of length.
A pure semiconductor at absolute zero has
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Absence of electrons in the conduction band.
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All the electrons occupying the valence band.
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Large $$E_g$$ value.
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All of the above.
Explanation
At absolute zero temperature, in a pure semiconductor, all electrons occupy the valence band and no electrons are present in the conduction band. The forbidden gap energy $$E_g$$ is large.
In n-type of semiconductor, majority carries are
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Positron
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Electron
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Holes
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Impure particles
Explanation
In n-type semiconductor, large number of free electrons is present. Hence, free electrons are the majority charge carriers in the n-type semiconductor. The free electrons (majority charge carriers) carry most of the electric charge or electric current in the n-type semiconductor.
In a transistor, the base is
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a conductor of low resistance
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a conductor of high resistance
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an insulator
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an extrinsic semiconductor
Explanation
In transistor base, emitter and collector are an extrinsic semiconductor but emitter and collector are heavily doped whereas base in very lightly doped, thus base is very thin layered semiconductor compared to emitter and collector.
A transistor has a base current of $$1\ mA$$ and emitter current $$90\ mA$$. The collector current will be
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$$90\ mA$$
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$$1\ mA$$
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$$89\ mA$$
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$$91\ mA$$
Explanation
Given: Base current, $$I_b = 1\ mA $$ and emittter current $$I_e = 90 \ mA$$
Let collector current be $$I_c$$
Using, $$I_e = I_b + I_c$$
$$90 = 1 + I_c \implies I_c = 89\ mA$$
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Practice Class 12 Medical Physics Quiz Questions and Answers
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