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CBSE Questions for Class 12 Medical Physics Semiconductor Electronics: Materials, Devices And Simple Circuits Quiz 5 - MCQExams.com

Which of the following is correct statement for voltage gain of n-p-n transistor in common emitter configuration?
  • AV increases continuously with increase in input voltage.
  • AV remains almost zero, then increases, decreases and again becomes zero with increase in input voltage.
  • AV is high, then decreases, then increases and becomes constant with increase in input voltage.
  • AV remains constant with increase in input voltage.
For detecting the light_______________.
  • The photodiode has to be forward biased
  • The photodiode has to be reversed biased
  • The LED has to connected in forward bias mode
  • The LED has to be connected in reverse bias mode
A logic gate is an electronic circuit which.
  • Makes logic decisions
  • Allows electron flow only in one direction
  • Works on binary algebra
  • Alternates between 0 and 1 values
  • None of the above
When a p-n junction diode is connected in forward bias its barrier potential
  • decreases and less current flows in the circuit
  • decreases and more current flows in the circuit
  • increases and more current flows in the circuit
  • decreases and no current flows in the circuit
The breakdown in a reverse biased p-n junction diode is more likely to occur due to.
  • large velocity of the minority charge if the doping concentration is small.
  • large velocity of the minority charge carriers if the doping concentration is small.
  • strong electric field in a depletion region if the doping concentration is small.
  • strong electric filed in the deplention region if the doping conentration is large.
Least doped region in a transistor is:
  • Either emitter or collector
  • Base
  • Emitter
  • Collector
The process by which ac is converted into dc is known as
  • Purification
  • Amplification
  • Rectification
  • Current Amplification
The nature of binding for a crystal with alternate and evenly spaced positive and negative ions is:
  • metallic
  • covalent
  • dipolar
  • ionic
Consider the following statements A and B and identify the correct answer.
Statement(A):A Zener diode is always connected in reverse bias to use it as voltage.
Statement(B):The potential barrier of a p-n junction lies between 0.1 to 0.3 V, approximately.
  • A and B are correct.
  • A and B are wrong.
  • A is correct but B is wrong.
  • A is wrong but B is correct.
A p-n junction diode cannot be used
  • as a rectifier.
  • for converting light energy to electric energy.
  • for getting light radiation.
  • for increasing the amplitude of an AC signal.
A full wave rectifier along with the output is shown in the given figure. The contributions from the diode (D2) are
15925_4732f6e2301a448999067146126a010c.PNG
  • C
  • A, C
  • B, D
  • A, B, C, D
A diode made of silicon has a barrier potential of 0.7 V and a current of 20 mA passes through the diode when a battery of emf 3 V and a resistor is connected to it. The power dissipated across the resistor and diode are
  • 0.046 W, 0.014 W
  • 4.6 W, 0.14 W
  • 0.46 W, 0.14 W
  • 46 W, 14 W
AND gate
  • it has no equivalence to switching circuit.
  • it is equivalent to series switching circuit.
  • it is equivalent to parallel switching circuit.
  • it is a mixture of series and parallel switching circuit.
In a full-wave rectifier, the output is taken across a load resistor of 800 ohm. If the resistance of diode in the forward biased condition is 200 ohm, the efficiency of rectification of ac power into dc power is(in percentage)
  • 64.96%
  • 40.6%
  • 81.2%
  • 80%
A full wave p-n diode rectifier uses a load resistance of 1300 Ω. No filter is used. If the internal resistance of each diode is 9 Ω, then the efficiency of this full wave rectifier is
  • 80.64%
  • 40.6%
  • 13.9%
  • 100%
The output Y of the gate circuit shown in the fig is

16546.png
  • ˉA+ˉB
  • ¯ˉA+ˉB
  • ¯A+B
  • A + B
If the wavelength of light emitted when an electron fall from the first excited state to the ground state are λ, the wavelength of emitted radiation when an electron fall from meta-stable state to the ground state will be
  • greater than λ
  • less than λ
  • λ
  • cannot be determined
An n-p-n transistor conducts when
  • both collector and emitter are positive with respect to the base.
  • collector is positive and emitter is negative with respect to the base.
  • collector is positive and emitter is at same potential as the base.
  • both collector and emitter are negative with respect to the base.
Consider the following statements A and B and identify the correct answer:
A) germanium is preferred over silicon in the construction of Zener diode.
B) germanium has high thermal stability than silicon in the construction of Zener diode.
  • Both (A) and (B) are true.
  • Both (A) and (B) are false.
  • (A) is true but (B) is false.
  • (A) is false but (B) is true.
In an n-p-n transistor, the base and collector currents are 100 muA and 9 mA respectively. Then the emitter current will be 
  • 9.1 mA
  • 18.2 mA
  • 3.91 muA
  • 18.2 muA
In the Boolean algebra: ¯A+B is equal to:
  • A + B
  • ˉˉA+ˉˉB
  • ¯¯A.B
  • ˉA . ˉB
In a n-p-n transistor, the collector current is 10 mA. If 10% of the electrons are lost in the base, then the emitter current is:
  • 10 mA
  • 0.9 mA
  • 0.09 mA
  • 11.1 mA
Boolean expression Y=A.ˉB+B.ˉA is given. If A=1,B=1 then Y=
  • 0
  • 1
  • 11
  • 10
For a CB amplifier current gain is 0.54. If the emitter current is 6.8 mA, the collector current will be
  • 1.7 mA
  • 2.7 mA
  • 3.7 mA
  • 4.7 mA
A transistor has α = 0.95. If the emitter current is 10 mA, then the collector current will be
  • 9.5 mA
  • 10 mA
  • 0.95 mA
  • 95 mA
The change in emitter current by 2.1mA results in change of 2mA in the collector current and a change of 0.05V in the emitter base voltage. The input resistance is
  • 5KΩ
  • 3KΩ
  • 1KΩ
  • 0.5KΩ
If the collector current changes from 2 mA to 3 mA in a transistor when collector - emitter voltage is increased from 2 V to 10 V, the output resistance is
  • 1 KΩ
  • 8 KΩ
  • 8 mΩ
  • 1 mΩ
A change of 200 mV in base-emitter voltage causes a change of 100μA in the base current. The input resistance of the transistor is
  • 2 KΩ
  • 2 Ω
  • 2 mΩ
  • 10 KΩ
In a common base circuit, if the collector base voltage is changed by 0.6 V, collector current changes by 0.02 mA. The output resistance will be
  • 104Ω
  • 2×104Ω
  • 3×104Ω
  • 4×104Ω
In a silicon transistor, a change of 7.89 mA in the emitter current, produces a change of 7.8 mA in the collector current. The change in the base current is necessary to produce an equivalent change in the collector current
  • 90 mA
  • 90 A
  • 90μA
  • 0.9 mA
In a transistor circuit, the base current changes from 30\mu A to 90\mu A. If the current gain of the transistor is 30, the change in the collector current is
  • 4\ mA
  • 2\ mA
  • 3.6\ mA
  • 1.8\ mA
The minimum number of gates required to realise the expression Z = DABC + D\overline{ABC} is
  • One
  • Two
  • Eight
  • Five
Logic gate having an output of 1 is
Consider a two-input AND gate of figure below. Out of the four entries for the Truth Table given here, the correct ones are
16531.JPG
  • All
  • 1 and 2 only
  • 1, 2 and 3 only
  • 1, 3 and 4 only
Given above are four logic gate symbols. Those for OR, NOR and NAND are respectively
16552.jpg
  • a, d, c
  • d, a, b
  • a, c, d
  • d, b, a
From the adjacent circuit, the output voltage is

16496_c49a484e27ff43fca70f3349e69ed794.png
  • 10 V
  • 100 V
  • 90 V
  • zero
The logic expression which is not equal to 1 in Boolean algebra is
  • A+1
  • A . \bar{A}
  • A+\bar{A}
  • \overline{\overline {A+A}}
A Truth table is given below. The logic gate having following truth table is
A    B   Y
0    0    1
1    0    0
0    1    0
1     1    0
  • NAND gate
  • NOR gate
  • AND gate
  • OR gate
From the circuit shown below, the maximum and minimum value of zener diode current are :
16497_1a95c39592dd46d4b12a686fc3d73d3f.png
  • 6\ mA,\ 5\ mA
  • 14\ mA,\ 5\ mA
  • 9\ mA,\ 1\ mA
  • 3\ mA,\ 2\ mA
Boolean expression for the gate circuit shown below is
16559.png
  • A + \bar{A} =1
  • A+1=1
  • A+A=A
  • A+0=A
In the given circuit, two input wave forms A and B are applied simultaneously. The resultant wave form at Y is
16563.png
The expression of Y in the above circuit is
16576.png
  • ABCD
  • A+BCD
  • A +B+C+D
  • AB+CD
In the given circuit, if A and B represent two inputs and C represents the output, the circuit represents
16609.png
  • NOR gate
  • AND gate
  • gate
  • OR gate
The combinations of the NAND gates shown hereunder are equivalent to
16554.png
  • an OR gate and an AND gate respectively
  • an AND gate and a NOT gate respectively
  • an AND gate and OR gate respectively
  • an OR gate and an NOT gate respectively
The output Y of the gate circuit shown in the figure below is 
16573.png
  • \overline{A.B}
  • \bar{A}.\bar{B}
  • \overline{\overline{A+B}}
  • \bar{A}+\bar{B}
The transistor are usually made of
  • metal oxides with high temperature coefficient of resistivity.
  • metals with high temperature coefficient of resistivity.
  • metals with low temperature coefficient of resistivity.
  • semiconducting materials having low temperature coefficient of resistivity.
To get an output 1 from the circuit shown in the figure, the input must be 
16568.png
  • A=0, B=1,C=0
  • A=1, B=0, C=0
  • A=1, B=0, C=1
  • A=1, B=1, C=0
The arrangement shown in the figure performs the logic function of 
16566.png
  • AND gate
  • NAND gate
  • OR gate
  • XOR gate
The output of the combination of the gates shown in the figure is
16575.png
  • A + A. B
  • (A+B)A+\bar{B}
  • (A.B)+(\bar{A}.\bar{B})
  • (A+B)\overline{(A.B)}
Carbon, silicon and germanium have four valence electrons each. At room temperature the appropriate statement is
  • The number of free electrons for conduction is significant only in Si and Ge but small in C
  • The number of free conduction electrons is significant in C but small Si and Ge.
  • The number of free conduction electrons is negligibly small in all the three.
  • The number of free conduction electrons is significant in all the three.
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