Explanation
Extrinsic semiconductor (N-type or P-type) are neutral.
In forward biased PN-junction, external voltage decreases the potential barrier, so current is maximum. While in reversed biased PN-junction, external voltage increases the potential barrier, so the current is very small.
Filter circuits are used to get smooth DC π-filter is the best filter.
Depletion layer consists of mainly stationary ions.
Because in case (1) N is connected with N. This is not a series combination of transistor.
After a large reverse voltage is PN-junction diode, a huge current flows in the reverse direction suddenly. This is called Breakdown of PN-junction diode.
In forward biasing both positive and negative charge carriers move towards the junction.
When polarity of the battery is reversed, the P-N junction becomes reverse biased so no current flows.
In N-type semiconductor majority charge carriers are electrons.
At a particular reverse voltage in PN-junction, a huge current flows in reverse direction known as avalanche current.
Due to the large concentration of electrons in N-side and holes in P-side, they diffuses from their own side to other side. Hence depletion region produces.
Depletion layer is more in less doped side.
When NPN transistor is used as an amplifier, majority charge carrier electrons of N-type emitter move from emitter to base and then base to collector.
When reverse bias is increased, the electric field at the junction also increases. At some stage the electric field breaks the covalent bond, thus the large number of charge carriers are generated. This is called Zener breakdown.
In forward biasing both VB and x decreases.
In this condition P-N junction, is reverse biased.
Across the P-N junction, a barrier potential is developed whose direction is from N region to P region.
It doesn't obey ohm's law
In unbiased condition PN-junction, depletion region is generated which stops the movement of charge carriers.
Arsenic has five valence electrons, so it a donor impurity. Hence, X becomes N-type semiconductor. Indium has only three outer electrons, so it is an acceptor impurity. Hence Y becomes P-type semiconductor. Also, N (ie.,X) is connected to positive terminal of battery and P(i.e., Y) is connected to negative terminal of battery so PN- junction is reverse biased.
In photodiode, it is illuminated by light radiations, which in turn produces electric current.
The given circuit is full wave rectifier.
The diode is in reverse biasing so current through it is zero.
For the breakdown condition of the Zener diode, the applied voltage VI > VZ In that case, for a wide range of values, the current will change but the voltage remains constant.
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