Explanation
In case of a N-P junction diode, width of the depletion region decreases as the forward bias voltage decreases.
The emitter base junction is forward biased while collector base junction is reversed biased.
α is the ratio of collector current and emitter current while β is the ratio of collector current and base current.
In transistor, base is least doped.
The base is always thin.
Because emitter is common to both, base (P) and collector N. (N)
Emitter is heavily doped.
In CE amplifier, the input signal is applied across base emitter junction.
Oscillator can produce radio waves of constant amplitude.
In CB amplifier Input and output voltage signal are in same phase.
In the Colpitt oscillator, the tank circuit has a single inductor, tapped in the middle with two capacitors instead of two inductors and a single capacitor as in the case of the Hartely oscillator.
Covalent bonding exists in semi-conductor.
The width of the potential barrier and its magnitude is the most important factor in the functioning of a p—n diode. These factors depend on the nature of the semiconductor, the diffusion length and the concentration of the charge carriers. The rise in temperature will affect all semiconductors.
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