Explanation
Potential across the PN-junction varies symmetrically linear, having P side negative and N side positive.
PN junction has low resistance in one direction of potential difference +V, so a large current flows (forward biasing). It has a high resistance in the opposite potential difference direction –V, so a very small current flows (reverse biasing).
In positive half cycle p–n junction (D) conducts and current flows through R. In negative half cycle PN junction blocks the current.
With rise in temperature, work function decreases (non- linearly).
Ga has a valancy of 3
As temperature increases saturation current also increases.
Output signal voltage has phase difference of 1800 with respect to input.
Grid is maintained between 0 volt to certain negative voltage.
A and C arc analogue but B is digital signal..
(a), (b) At OK, a semiconductor becomes a perfect insulator. Therefore at 0 K, if some potential difference is applied across an insulator or a semiconductor, current is zero. (c) But is conductor will become a superconductor at 0 K. Therefore, current will be infinite. (d) In reverse biasing at 300 K through a P—N junction diode, a small finite current flows due to minority charge carriers.
Resistivity of semiconductors decreases with temperature. The atoms of a semiconductor vibrate with larger amplitudes at higher temperatures there by increasing it’s, conductivity not resistivity.
In diode the output is in same phase with the input therefore it cannot be used to built NOT gate.
In common emitter transistor amplifier current gain β > 1, so output current > input current, hence assertion is correct.
Also, input circuit has low resistance due to forward biasing to emitter base junction, hence reason is false.
In forward biasing of PN-junction current flows due to diffusion of majority charge carriers. While in reverse biasing current flows due to drifting of minority charge carriers.
The circuit given in the reason is a PNP transistor having emitter more negative w.r.t. base so it is reverse biased and collector is more positive w.r.t. base so it is forward biased.
The ratio of the velocity to the applied field is called the mobility. Since electrons are lighter than holes, they move faster in applied field than holes.
The energy gap for germanium is less (0.72 eV) than the energy gap of silicon (1.1 eV). Therefore, silicon is preferred over germanium for making semiconductor devices.
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