Explanation
In figure 2, 4 and 5 P-crystals are more positive as compared to N-crystals.
In forward biasing, resistance of PN-junction diode is zero, so whole voltage appears across the resistance.
Because N-side is more positive as compared to P-side.
When a light (wavelength sufficient to break the covalent bond) falls on the junction, new hole electron pairs are created. No of produced electron hole pairs depend upon no. of photons. So, photo e.m.f. or current is proportional to intensity of light.
In reverse biasing negative terminal of the battery is connected to N-side.
In the given condition diode is in reverse biasing, so it acts as open circuit. Hence potential difference between A and B is 6V.
Zener breakdown can occur in heavily doped diodes. In lightly doped diodes the necessary voltage is higher, and avalanche multiplication is then the chief process involved.
In unbiased condition of PN-junction, depletion region is generated which stops the movement of charge carriers.
For a wide range of values of load resistance, the current in the zener diode may change but the voltage across it remains unaffected. Thus the output voltage across the zener diode is a regulated voltage.
The diode is in reverse biasing, so current through it is zero.
In full wave rectifier, the fundamental frequency in ripple is twice that of input frequency.
Because emitter (N) is common to both, base (P) and collector (N).
FET is unipolar
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