Explanation
NAND gate is a universal gate.
The electrons are the charge carrier in conduction band and holes in valence band at higher temperature.
On increasing the temperature of a semiconductor, more current carries became free due to breakage of covalent bonds which will increase the conductivity of semiconductor.
Phosphorus is a pentavalent material, when it is doped in a pure semiconductor of germanium, then in that germanium ne >> nh.
The width of p-n junction increases with reverse biasing and decreases with forward biasing.
An oscillator is used as a feed back amplifier, in which the positive feed back helps to enhance the input and hence output.
Potential barrier energy (Eb) = work function (Wo) + Fermi energy (Ef).
As I ∝ T2; so making temp. double, current becomes nearly four times.
For negative plate potential, the plate current is zero
When grid is moved closer to the plate, the separation between grid and cathode increases. Due to which the effect of grid potential on the flow of electrons from cathode to plate decreases.
Calcite is a crystalline solid
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