Explanation
Forbidden energy gap of a semiconductor does not change with change in temperature.
Higher is the atomic number of a semiconductor, smaller is the energy gap.
The probability of occupation of the highest electron state in valence band at room temperature becomes half according to Fermi dirac distribution.
In half wave rectifier, we get the output only in one half cycle of input a.c. therefore, the frequency of the ripple of the out put is same as that of input a.c. i.e. 50 Hz.
π-type filter is better than the other filters as it controls the variation of current as well as voltage.
In circuit 1, N is connected with N, which is not a series combination of p-n junction. In circuit 2, each p-n junction is forward bias, hence same current flows, giving same pot. diff. across p-n junction. In circuit 3, each p-n junction is reverse biased, same leakage current will flow, giving equal pot. diff. across each p-n junction diode.
The input signal should be connected between two points of bridge rectifier such that in positive half wave of input signal, one p-n junction should be forward biased and other should be reverse biased and in negative half wave of input signal, the reverse should take place. It will be so when input is connected between B and D
p-n junction is a non-ohmic resistance.
The r.m.s value of output current in a full wave rectifier is I0/√2
Covalent bonding exists in semiconductors.
In triclinic crystal a ≠ b ≠ c and α ≠ β ≠ γ
In p-type semiconductor, holes are majority carriers for electric current.
In p-type semiconductor, holes and electrons are majority and minority charge carriers
Hole is a space which was previously occupied by an electron.
P-N junction is forward biased if positive of external battery is connected to p-region and negative of battery to n-region of p-n junction.
In a transistor base is least doped
When forward bias voltage in a p-n junction diode is increased, it opposes the barrier voltage. Due to which the length of depletion region decreases.
Gallium has atomic number 31. Its valence is 3. So on doping gallium in pure germanium semiconductor we get p-type semiconductor.
When a transistor is properly biased, the emitter base junction is forward biased, so the size of depletion layer there becomes small due to which majority carriers move from emitter towards base. The collector-base junction is reversed biased in transistor. Due to which the collector-base depletion layer becomes large.
When npn transistor is used, the majority charge carriers electrons move from emitter to base and then base to collector.
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