The PN junction diode is used as

The emitter-base junction of a transistor is …… biased while the collector-base junction is ……. biased.

In an NPN transistor the collector current is 24 mA. If 80% of electrons reach collector its base current in mA is

When a p-n junction is forward biased, then:

When a transistor is used as a switch it is in:

Which of the following is correct for n-type semiconductor?

The combination of ‘NAND’ gates shown here under (figure) are equivalent to

The input resistance of a silicon transistor is

100 $\mathrm{\Omega }$. Base current is changed by 40 $\mathrm{\mu A}$

which results in a change in collector current

by 2 mA. This transistor is used as a common-

emitter amplifier with a load resistance of 4 k$\mathrm{\Omega }$.

The voltage gain of the amplifier is

The following configuration of the logic gate is equivalent to

Three ideal diodes are connected to the battery as shown in the circuit. The current supplied by the battery is

In a common emitter transistor amplifier, the audio signal voltage across resistance of 1 k$\Omega$ is 2V. If the base resistance is 200$\Omega$ and the current amplification factor is 50, the input signal voltage will be

If a small amount of aluminium is added to the silicon crystal:

A transistor is operated in common emitter configuration at ${\mathrm{V}}_{\mathrm{c}} = 10\mathrm{V}.$ When base current is changed from 10mA to 30mA, it produces a change in emitter current from 2A to 4A, the current amplification factor is

$$\begin{gathered} \mathrm{If} \mathrm{\alpha } \mathrm{be} \mathrm{the} \mathrm{current} \mathrm{gain} \mathrm{of} \mathrm{a} \mathrm{transistor} \mathrm{in} \mathrm{common} \mathrm{base} \mathrm{mode} \mathrm{and} \mathrm{\beta } \mathrm{be} \mathrm{the} \mathrm{current} \mathrm{gain} \mathrm{in} \\ \mathrm{common} \mathrm{emitter} \mathrm{mode} \mathrm{then}- \end{gathered}$$

In semiconductors, which of the following gives the law of mass action (where symbols have their usual meanings)-

The conductivity of an n-type semiconductor whose density of conduction electrons is ${\mathrm{n}}_{\mathrm{e}}$, Density of holes is ${\mathrm{n}}_{\mathrm{h}}$, Mobility of conduction electrons is ${\mathrm{m}}_{\mathrm{e}}$and Mobility of holes is ${\mathrm{m}}_{\mathrm{h}},$ will be

The current through an ideal p-n junction diode shown in the circuit will be -

$$\begin{gathered} \mathrm{In} \mathrm{the} \mathrm{given} \mathrm{circuit} \mathrm{power} \\ \mathrm{developed} \mathrm{in} 1\mathrm{k\Omega } \mathrm{resistor} \mathrm{is} \end{gathered}$$

A semiconductor is known to have an electron concentration of $8\times {10}^{13}$ cm^-3 and hole concentration of $5\times {10}^2$ cm^-3. The semiconductor is 

In the given figure, the potential difference between A and B is:

In a common-emitter transistor amplifier, the audio signal voltage across the collector is 3V. The resistance of the collector is 3k$\Omega$. If the current gain is 100 and the base resistance is 2k$\Omega$, the voltage and power gain of the amplifier are:

Which one of the following represents forward biased circuit?

The given circuit has two ideal diodes connected as shown in the figure below. The current flowing through the resistance $R_1$ will be

To get output 1 for the following circuit, the correct choice for the input is

An n-p-n transistor is connected in the common base configuration in a given amplifier. A load resistance of 800Ω is connected in the collector circuit and the voltage drop across it is 0.8 V. If the current amplification factor is 0.96 and the input resistance of the circuits is 192 Ω the voltage gain and the power gain of the amplifier will respectively be

If in a p-n junction, a square input signal of 10V is applied as shown, then the output across R_L will be:
          

In the given figure, a diode D is connected to an external resistance R = 100 Ω  and an e.m.f of 3.5 V. If the barrier potential developed across the diode is 0.5 V, the current in the circuit will be

The given graph represents the V-I characteristic for a semiconductor device. Which of the following statement is correct?
                    

The barrier potential of a p-n junction depends on
(i)type of semiconductor material
(ii)amount of doping
(iii)temperature
Which one of the following is correct

The output (x) of logic circuit shown in figure will be