When a semiconductor is heated, its resistance

In an insulator, the forbidden energy gap between the valence band and conduction band is of the order of

An N-type semiconductor is

The energy band gap of Si is

The forbidden energy bandgap in conductors, semiconductors, and insulators are ${\mathrm{EG}}_1,{\mathrm{EG}}_{2 }\mathrm{and} {\mathrm{EG}}_3$ and respectively. The relation among them is

When Ge crystals are doped with phosphorus atom, then it becomes 

Let ${\mathrm{n}}_{\mathrm{P}}$ and ${\mathrm{n}}_{\mathrm{e}}$ be the number of holes and conduction electrons respectively in a semiconductor. Then

Wires P and Q have the same resistance at ordinary (room) temperature. When heated, resistance of P increases and that of Q decreases. We conclude that

In extrinsic P and N-type, semiconductor materials, the ratio of the impurity atoms to the pure semiconductor atoms is about 

The forbidden gap in the energy bands of germanium at room temperature is about 

In P-type semiconductor, the majority and minority charge carriers are respectively

At zero Kelvin a piece of germanium

The temperature (T) dependence of resistivity ($\rho$) of a semiconductor is represented by

A semiconductor is cooled from ${\mathrm{T}}_1\mathrm{K}$ to ${\mathrm{T}}_2\mathrm{K}$. Its resistance

In intrinsic semiconductor at room temperature, the number of electrons and holes are

In a semiconductor, the separation between the conduction band and valence band is of the order of

The intrinsic semiconductor becomes an insulator at

In a good conductor, the energy gap between the conduction band and the valence band is

The impurity atom added to germanium to make it an N-type semiconductor is 

When N-type of semiconductor is heated

To obtain a P-type germanium semiconductor, it must be doped with 

The temperature coefficient of resistance of a semiconductor

A P-type semiconductor is formed when- 
A. As impurity is mixed in Si
B. Al impurity is mixed in Si
C. B impurity is mixed in Ge
D. P impurity is mixed in Ge

In case of a semiconductor, which of the following statement is wrong 

Energy bands in solids are a consequence of

In a P-type semiconductor

At ordinary temperatures, the electrical conductivity of semi conductors in  mho/meter is in the range 

 In a P-type semiconductor, germanium is doped with

GaAs is 

If ${\mathrm{n}}_{\mathrm{e}}$ and ${\mathrm{n}}_{\mathrm{h}}$ are the number of electrons and holes in a semiconductor heavily doped with phosphorus, then