A full-wave rectifier circuit along with the input and output voltages is shown in the figure.

The contribution to the output voltage from diode – 2 is :

The i-V characteristic of a P-N junction diode is shown below. The approximate dynamic resistance of the P-N junction when a forward bias of 2 volt is applied

The given figure shows the wave forms for two inputs A and B and that for the output Y of a logic circuit. The logic circuit is 

The variation of anode current in a triode corresponding to a change in grid potential at three different values of the plate potential is shown in the diagram. The mutual conductance of the triode is 

A silicon specimen is made into a P-type semi-conductor by dopping, on an average, one Indium atom per $5\times {10}^7$ silicon atoms. If the number density of atoms in the silicon specimen is $5\times {10}^{28} \mathrm{atoms}/{\mathrm{m}}^3$ then the number of acceptor atoms in silicon per cubic centimeter will be:

The probability of electrons to be found in the conduction band of an intrinsic semiconductor at a finite temperature

A 2V battery is connected across the points A and B as shown in the figure given below. Assuming that the resistance of each diode is zero in forward bias and infinity in reverse bias, the current supplied by the battery when its positive terminal is connected to A is 

 In the circuit, if the forward voltage drop for the diode is 0.5V, the current will be 

Current in the circuit will be 

(a) $\frac{5}{40}\mathrm{A}$
(b) $\frac{5}{50}\mathrm{A}$
(c) $\frac{5}{10}\mathrm{A}$
(d) $\frac{5}{20}\mathrm{A}$

The diode used in the circuit shown in the figure has a constant voltage drop of 0.5 V at all currents and a maximum power rating of 100 milliwatts. What should be the value of the resistor R, connected in series with the diode for obtaining maximum current 

In the following common emitter configuration an NPN transistor with current gain $\mathrm{\beta }$ = 100 is used. The output voltage of the amplifier will be 

A sinusoidal voltage of peak value 200 volts is connected to a diode and resistor R in the circuit shown so that half-wave rectification occurs. If the forward resistance of the diode is negligible compared to R the r.m.s voltage (in volt) across R is approximately

The junction diode in the following circuit requires a minimum current of 1 mA to be above the knee point (0.7 V) of its I-V characteristic curve. The voltage across the diode is independent of current above the knee point. If ${\mathrm{V}}_{\mathrm{B}}$ = 5 V, then the maximum value of R so that the voltage is above the knee point, will be

To get output Y=1 for the following circuit, the correct choice for the input is:
             

In the circuit given below, V(t) is the sinusoidal voltage source, voltage drop ${\mathrm{V}}_{\mathrm{AB}}$(t) across the resistance R is

The peak voltage in the output of a half-wave diode rectifier fed with a sinusoidal signal without filter is 10 V. The dc component of the output voltage is 

A transistor is used as an amplifier in CB mode with a load resistance of 5 k$\mathrm{\Omega }$. The current gain of the amplifier is 0.98 and the input resistance is 70 $\mathrm{\Omega }$, the voltage gain and power gain respectively are :

In the following circuits PN-junction diodes ${\mathrm{D}}_1$, ${\mathrm{D}}_2$ and ${\mathrm{D}}_3$ are ideal for the following potential of A and B, the correct increasing order of resistance between A and B will be

(i) – 10 V, – 5V           (ii) – 5V, – 10 V
(iii) – 4V, – 12V

(a) (i) < (ii) < (iii)                       (b) (iii) < (ii) < (i)
(c) (ii) = (iii) < (i)                       (d) (i) = (iii) < (ii)

The circuit shown in the following figure contains two diode ${\mathrm{D}}_1$ and ${\mathrm{D}}_2$ each with a forward resistance of 50 ohms and with infinite backward resistance. If the battery voltage is 6 V, the current through the 100 ohm resistance (in amperes) is

The contribution in the total current flowing through a semiconductor due to electrons and holes are $\frac{3}{4}$ and $\frac{1}{4}$ respectively. If the drift velocity of electrons is $\frac{5}{2}$ times that of holes at this temperature, then the ratio of concentration of electrons and holes is

Ge and Si diodes conduct at 0.3 V and 0.7 V respectively. In the following figure if Ge diode connection are reversed, the valve of ${\mathrm{V}}_0$ changes by 

In the following circuit, find ${\mathrm{I}}_1$ and ${\mathrm{I}}_2$.

(a) 0, 0
(b) 5 mA, 5 mA
(c) 5 mA, 0
(d) 0, 5 mA

For the transistor circuit shown below, if $\mathrm{\beta }$ = 100, the voltage drop between emitter and base is 0.7 V, then the value of ${\mathrm{V}}_{\mathrm{CE}}$ will be:
          

The following configuration of gate is equivalent to

Figure gives a system of logic gates. From the study of truth table it can be found that to produce a high output (1) at R, we must have

The combination of gates shown below produces

The figure shows two NAND gates followed by a NOR gate. The system is equivalent to the following logic gate:

The diagram of a logic circuit is given below. The output F of the circuit is represented by
    

In the combination of the following gates, the output Y can be written in terms of inputs A and B as:

In the circuit shown in the figure, the input voltage V_i is 20 V, V_BE = 0, and V_CE = 0. The values of I_B, I_C and $\beta$ are given by: