In a p-n junction diode, the change in temperature due to heating:

affects the overall V-I characteristics of a p-n junction.

affects only reverse resistance.

does not affect the resistance of the p-n junction.

Physics - Semiconductor Electronics - Quiz-9

The given graph represents the V-I characteristic for a semiconductor device.

Which of the following statement is correct?

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It is a V-I characteristic for the solar cell where point A represents open-circuit voltage and point B short circuit current.
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It is for a solar cell and points A and B represent open-circuit voltage and current, respectively.
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It is for a photodiode and points A and B represent open-circuit voltage and current respectively.
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It is for a LED and points A and B represent open circuit voltage and short circuit current, respectively.

In an n-type semiconductor, which of the following statement is true?

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Holes are the majority carriers and trivalent atoms are dopants.
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Electrons are minority carriers and pentavalent atoms are dopants.
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Holes are minority carriers and pentavalent atoms are dopants.
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Electrons are majority carriers and trivalent atoms are dopants.

In a common emitter (CE) amplifier having a voltage gain G, the transistor used has trans conductance 0.03 mho and current gain 25. If the above transistor is replaced with another one with trans conductance 0.02 mho and current gain 20, the voltage gain will be:

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1.5G
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$\frac{1}{3}$ G
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$\frac{5}{4}$ G
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$\frac{2}{3}$ G

The output (X) of the logic circuit shown in figure will be:

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X = $\bar{A \cdot B}$
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X = A.B
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X = $\bar{A + B}$
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X = $\bar{\bar{A}} \cdot \bar{\bar{B}}$

Two ideal diodes are connected to a battery as shown in the circuit. The current supplied by the battery is:

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0.75 A
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zero
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0.25 A
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0.5 A

Transfer characteristic [output voltage ( $V_{o}$ ) vs input voltage ( $V_{i}$ )] for a base biased transistor in CE configurations as shown in the figure. For using the transistor as a switch, it is used:

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In region III
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Both in the region (I) and (III)
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In region II
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In region I

Symbolic representation of four gates is shown as:

Pick out which ones are for AND, NAND, and NOT gates, respectively.

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(i), (iv), and (iii)
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(ii), (iii), and (iv)
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(ii), (iv), and (iii)
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(ii), (iv), and (i)

A transistor is operated in a common emitter configuration at V_c =2 V such that a change in the base current from 100 $μ A$ to 300 $μ A$ produces a change in the collector current from 10 mA to 20mA. The current gain is:

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75
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100
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25
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50

A common emitter amplifier has a voltage gain of 50, an input impedance of 100 Ω and an output impedance of 200 Ω. The power gain of the amplifier is:

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500
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1000
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1250
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50

To get an output Y = 1 from the circuit shown below, the input must be:

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A= B=1 C=0
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A=0 B=0 C=1
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A=1 B=0 C=1
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A=1 B=0 C=0

A p-n photodiode is fabricated from a semiconductor with a band-gap of 2.5 eV. It can detect a signal of wavelength:

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6000 Å
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4000 nm
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6000 nm
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4000 Å

The circuit is equivalent to:
The circuit is equivalent to | Physics Questions

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AND gate
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NAND gate
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NOR gate
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OR gate

In the following circuit, the output Y for all possible inputs A and B is expressed by the truth table:

1. A B Y
0 0 0
0 1 0
1 0 0
1 1 1

0 0 1
0 1 1
1 0 1
1 1 0

0 0 1
0 1 0
1 0 0
1 1 1

0 0 0
0 1 1
1 0 1

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1 1 1
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2. A B Y
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3. A B Y
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4. A B Y

In the energy band diagram of a material shown below, the open circles and filled circles denote holes and electrons respectively. The material is a/an:

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p-type semiconductor
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insulator
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metal
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n-type semiconductor

A transistor is operated in a common emitter configuration at constant collector voltage V_c = 1.5 V such that a change in the base current from 100 μA to 150 μA produces a change in the collector current from 5 mA to 10 mA. The current gain (β) is: