Explanation
If the resistivity of an alloy is ρ′ and that of constituent metal is ρ then :
Given that,
RL=2kΩ
R=4kΩ
V=60V
VZ=10V
The Zener diode in the breakdown region maintain a constant voltage, the voltage across RL is
VRL=VL=10V
Now, the load current is
IL=VLRL
IL=102000
IL=5mA
Now, using Kirchhoff’s law
ILRL−60+4000ΩI=0
10−60+4000I=0
4000I=50
I=504000
I=0.0125
I=12.5mA
Now, from Kirchhoff’s current law
I=IZ+IL
IZ=12.5−5
IZ=7.5mA
Hence, the current is 12.5 mA, 5 mA and 7.5 mA
When a diode is connected across AC source, it works as both half and full wave rectifier. Because for positive half of cycle it allows the current to flow but for negative half of cycle it stops current to flow.
The electrical conductivity of a semiconductor increases when electromagnetic radiation of wavelength shorter than 2480 nm is incident on it.
The value of reverse voltage at which this occurs is controlled by the amount ot doping of the diode. A heavily doped diode has a low Zener breakdown voltage, while a lightly doped diode has a high Zener breakdown voltage. At voltages above approximately 8V, the predominant mechanism is the avalanche breakdown.
A and B are input
Light emitting diode is a forward biased P-N junction which emits light.
The voltage across it = 2 v
Battery voltage = 6 v
Hence total voltage in the circuit = V = 6 - 2 = 4 v
since a LED has 0 resistance in the forward biased region, total resistance in the circuit
= 0 + r = r
current I = 10 mA = 10/1000 A = 0.01 A
we know that,
R = V/I
=> r = 4/0.01 = 400Ω
Hence the value of the limiting resistor is 400Ω
Semiconductor mobility depends on the impurity concentrations including donor and acceptor concentrations, defect concentration, temperature, and electron and hole concentrations. Mobility describes the relation between drift velocity of electrons or holes and an applied electric field in a solid.
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