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CBSE Questions for Class 12 Engineering Physics Semiconductor Electronics: Materials,Devices And Simple Circuits Quiz 15 - MCQExams.com

A NOR gate and a NAND gate are connected as shown in the figure. Two different sets of inputs are given to this setup. In the first case, the inputs to the gates are A=0,B=0,C=0. In the second case, the inputs are A=1,B=0,C=1. The output D in the first case and second case respectively are:
470375.PNG
  • 0 and 0
  • 0 and 1
  • 1 and 0
  • 1 and 1
Identify the semiconductor devices whose characteristics are given above in the order (a),(b),(c),(d):

472859.png
  • Simple diode, Zener diode, Solar cell, Light dependent resistance
  • Zener diode, Simple diode, Light dependent resistance, Solar cell
  • Solar cell, Light dependent resistance, Zener diode, Simple diode
  • Zener diode, Solar cell, Simple diode, Light dependent resistance
What is the value of output voltage v0 in the circuit shown in the figure


1213757_6adaa68463ad448688bab6bbfdc5d446.jpg
  • 6V
  • 15V
  • 20V
  • 26V
A 5 V zener diode is used to regulate the voltage across load resistor RL and the input voltage varies in between 10 V to 15 V. The load current also varies from 5 mA to 50 mA. Find the value of series resistance R. 
Given, IZ(min)=20mA
  • 70Ω
  • 90.91Ω
  • 142.86Ω
  • 71.43Ω
A zener diode voltage regulator operated in the range 120180 V produces a constant supply of 110 V and 250 mA to the load. If the maximum current is to be equally shared between the load and zener, then the values of series resistance (RS) and load resistance (RL) are:
  • RL=70 Ω;RS=280 Ω
  • RL=440 Ω;RS=140 Ω
  • RL=140 Ω;RS=440 Ω
  • RL=280 Ω;RS=70 Ω
Find the minimum and maximum load currents for which the zener diode as shown in figure will maintain regulation. Given, VZ=10V,RZ=0Ω,R=450Ω,IZ(min)=2mA and IZ(max)=60mA
507024_d790fb6f28014a63b68c4089de6c1afb.png
  • 0mA,33.3mA
  • 31.3mA,0mA
  • 2mA,31.3mA
  • 31.3mA,31.3mA
Consider an open-circuited p-n junction in thermal equilibrium. Let Jp,drift and Jp,diff be the hole drift and diffusion current densities, respectively, and let Jn,drift and Jn,diff be the corresponding electron current densities. Of the following equalities, mark false,at all points in the p-n junction structure.
  • Jn,drift + Jp,diff = -Jn,diffJp,diff
  • Jn,drift + Jn,diff = Jp,drift+Jp,diff
  • Jn,drift = Jn,diff and Jp,drift=Jp,diff
  • Jn,drift + Jp,diff = - Jn,driftJp,diff
In the circuit diagram given A and B are switches. The logic operation, which the switches can perform, is.....?
931543_1a85446909a64ac19cb3886fc6a4501d.JPG
  • NAND
  • OR
  • AND
  • None of these 
The waveforms A and B given below are given as input to a NAND gate. Then, its logic output y is
674068_565e7ca1b61847f4970044dae10621f9.png
  • for t1 to t2;y=0
  • for t2 to t3;y=1
  • for t3 to t4;y=1
  • for t4 to t5;y=0
  • for t5 to t6;y=0
When a semiconductor is heated, its resistance.
  • Remains the same
  • Decreases
  • Increases
  • May increases or decreases depending on the semiconductor
Truth table for the given circuit will be

870163_6e9dd56d309d43908f0e2d3eafb10ed5.png
Two junction diodes one of germanium (Ge) and other of silicon (Si) are connected as shown in figure to a battery of emf 12 v and a load resistance 10 k Ω. The germanium diode conducts at 0.3 V and silicon diode at 0.7 V. When a current flows in the circuit, then the potential of terminal Y will be:
669281_d6a0b884a98c49fba620a49628080610.jpg
  • 12 V
  • 11 V
  • 11.3 V
  • 11.7 V
Mobilities of electrons and holes in a sample of intrinsic germanium at room temperature are 0.36m2V1s1 and 0.17m2V1s1. The electron and hole densities are each equal to 2.5×1019m3. The electrical conductivity of germanium is
  • 4.24Sm1
  • 2.12Sm1
  • 1.09Sm1
  • 0.47Sm1
Which of the following is NOT true about a zener diode?
  • It is used as a voltage regulator.
  • It is forward biased.
  • It is reverse biased.
  • It has a breakdown voltage.
In a diode detector, output circuit consist of R=1MΩandC=1pF. Calculate the carrier frequency it can detect.
  • 3×106Hz
  • 1×106Hz
  • 30×106Hz
  • 4×106Hz
If the lattice constant of this semiconductor is decreased, then which of the following is correct?
1093384_57cc357ec37a4e12bdaba71e91ef7e75.png
  • All Ec,Eg,Ev increase
  • Ec and Ev increases but Eg decrease
  • Ec and Ev decreases but Eg increase
  • All Ec,Eg,Ev decrease
A semiconductor X is made by doping a germanium crystal with arsenic (Z=33). A second semiconductor Y is made by doping germanium with indium(Z=49). The two are joined end to end and connected to a battery as shown. Which of the following statements is correct?
1100743_f90489a23d704ad0bad662e45f40b088.png
  • X is P-type, Y is N-type and the junction is forward biased
  • X is N-type, Y is P-type and the junction is forward biased
  • X is P-type, Y is N-type and the junction is reverse biased
  • X is N-type, Y is P-type and the junction is reverse biased
The electrical conductivity of a semiconductor increases when electromagnetic radiation of wavelength shorter than 2480nm is incident on it. The band gap(in eV) for the semiconductor is
  • 0.9
  • 0.7
  • 0.5
  • 0.1
There photo dlodes D1,D2 and D3 are made of semiconductor having band gap 2.5 eV,2 eV and 3 eV respectively. Which one will be able to detect light of wavelength 6000 Ao?
  • D1
  • D2
  • D3
  • D1 and D2 both
The following configuration of gate is equivalent to:
1027130_da35944491d048a8862723e8aefe82ec.png
  • NAND
  • XOR
  • OR
  • None of these
If the revers bias voltage applied  to a p-n junction diode is increased, its barrier capacitance would:
  • increase
  • decrease
  • remain constant
  • first increase then decrease
If no external voltage is applied across p-n junction, there would be 
  • no electric field across the junction
  • an electric field pointing from n-type side across the junction
  • an electric field pointing from p-type to n-type side across the juncrtion
  • none of these
The output of the gate is low when at least one of the its input is high. This is true for:-
  • NOR
  • OR
  • AND
  • NAND
In a zener regulated power supply of a zener diode with Vz = 6V is used for regulation. The load current is to be 4 mA and the unregulated input is 10 V. The value of series resistor Rs is
  • less than 5 Ω
  • Infinite
  • greater than 100 Ω
  • zero
The length of germanium rod is 0.928cm and its area of cross-section is 1 mm2. If for germanium n1=2.5×1019cm3. μh=0.19m2V1s1. Its resistance is
  • 2.5kΩ
  • 4.0kΩ
  • 5.0kΩ
  • 10.0kΩ
In the figure shown, the maximum and minimum currents through Zener diode are
1182045_c3d67ef96b764685813857627a737cb0.GIF
  • 5 mA, 1 mA
  • 14 mA, 6 mA
  • 14 mA, 5 mA
  • 9 mA, 1 mA
The current density (J) for an intrinsic semiconductor is given by which of the following equations?
  • j=n1.e.(μe+μh).E
  • j=n1.e.(μeμh).E
  • j=n1.e.(μeμh)E
  • j=En1.e.(μe+μh)
The following data are for intrinsic germanium at 300 K. n1=2.4×1019 /m3, μe=0.39m2 /Vs, μn=0.19m2 /Vs. Calculate the conductivity of intrinsic germanium.
  • 4.3Sm1
  • 1.21Sm1
  • 2.22Sm1
  • 4.22Sm1
For inputs (A, B) and output (Y) of the following gate can be expressed as 
1154030_97e18dd46fe74579adf2ddb7870ec580.png
  • AB
  • A.B
  • A+ B
  •  AB+BA
A zener diode is specified as having a breakdown voltage of 9.1V, with a maximum power dissipation of 364 mW. What is the maximum current the diode can handle? 
  • 40 mA
  • 60 mA
  • 50 mA
  • 45 mA
If the lattice constant of this semiconductor is decreased, then which of the following is correct?
1205545_d4dfc1133c824949ba7840d43cad20f4.PNG
  • All Ec,Eg,Ev increase
  • Ec and Ev increase but Eg decreases
  • Ec and Ev decrease but Eg incerases
  • All Ec,Eg,Ev decrease
Evaluate:
1193268_d9e11d377ed44abf95f1573762476d71.jpg
  • NAND
  • AND
  • NOR
  • OR
The majority current in a pn junction is :  
  • from the n side to the p side
  • from the p side to the n side
  • from the n side to the p side if the junction is forwardbiased and in the opposite direction if it is reverse biased
  • from the p side to the n side if the junction is forwardbiased and in the opposite direction if it is reverse biased
The diode used in the circuit shown in the figure has a constant voltage drog currents and a maximum power rating of 100 mW. What should be the value r, connected in series with the diode, for obtaining maximum current l?
1223885_1d1ea05002c74cf391c68e3b4b2844c0.PNG
  • 200 Ω
  • 6.67 Ω
  • 5 Ω
  • 1.5 Ω
Silicon is a semiconductor. On adding a small quantity of arsenic to it its conductivity 
  • inceases
  • decreases
  • remaions the same
  • becomes zero
The output in the figure is:-

1216963_21e14e2a735741eeb89d7437c05ebabe.PNG
  • ¯AB
  • ¯¯A.¯B
  • ¯¯A.B
  • ¯A.¯B
Two wires A and B of same material and same mass have radius 2r and r. If resistance of wire A is 34Ω, then resistance of B will be?
  • 544Ω
  • 272Ω
  • 68Ω
  • 17Ω
If in  a p-n junction diode, a square input signal  of 10V is applied as shown. Then, the output singnal across RL will be :-  
1312438_9b656ba5e8e9410bb804ecddcf6ff709.PNG
C and Si both have a same lattice structure, having 4 bonding electrons in each. However, C is insulator whereas Si is intrinsic semiconductor:-
  • In case of C the valance bond is not completely filled at absolute zero temperature
  •  In the case of C, the conduction band is partly filled even at zero temperature
  • The four bonding electron in case of C lies in the second orbit whereas in case of Si lies in third orbit
  • The four bonding electron in case of C lies in third orbit whereas for Si they lie in fourth orbit
What is the output of the combination of the gates shown in fig. below ?
1322039_e2a065f6176f4917b8e7ada6195aab7b.png
  • A+¯A.B
  • A+A.B
  • (A+B).(¯A.B)
  • (A+B)(¯A+B)
If in a p-n junction diode, a square input signal of 10V is applied as shown. Then, the output signal across RL will be-
1325003_3e7ea425b3cf497fb8f5d4ca83a20a7a.png
Shown in the figure is a combination of logic gates. The output values at P and Q are correctly represented by which of the following?
1324955_42c645995e54451d85be8b1fc4d08194.jpg
  • 0,0
  • 1,1
  • 0,1
  • 1,0
What is the output of the combination of the gates shown in fig. below ?
1322041_00fed9517bff49e4b595319496ce7e0b.png
  • A+¯A.B
  • A+A.B
  • (A+B).(¯A.B)
  • (A+B)(¯A+B)
What is the output of the combination of the gates shown in fig. below ?
1322040_0805fa8cf3614a72955c0bd237753b1d.png
  • A+¯A.B
  • A+A.B
  • (A+B).(¯A.B)
  • (A+B)(¯A+B)
In the adjacent diagram A and B represent two inputs and C represent the output,
The circuit represents
1317224_bcf3c417ce884432a0ed815bfce7e471.PNG
  • NOR gate
  • AND gate
  • NAND gate
  • OR gate
 In p - type semi conductor, there are 
  • immobile negative ions
  • immobile positive ions
  • no minority carriers
  • holes as majority carriers
The combined network of the following NOR gates will behaves as
1358001_521cb5ec8da44fc6bf075b68c9dd25ef.png
  • AND gate
  • XOR gate
  • NOR gate
  • NAND gate
The logic which produces LOW output when one of the input is HIGH and produces HIGH output only when all its inputs are LOW is called _.
  • AND gate
  • OR gate
  • NOR gate
  • NAND gate
For a diode connected in parallel with a resistor, which is the most likely current (I) -voltage (V) characteristics?
1337483_69c0ff142860481499ac11f2ad28f9be.PNG
In the resistance box, a double wired coil is fixed as shown in the figure so that :-
1360842_2343d0f75bb34fa7be7a58f8906dcdad.png
  • The wire may not be heated
  • The wire may not break easily
  • Electromagnetic induction may increase
  • Self induction in the coil may be negligible
0:0:2


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