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CBSE Questions for Class 12 Engineering Physics Semiconductor Electronics: Materials,Devices And Simple Circuits Quiz 4 - MCQExams.com
CBSE
Class 12 Engineering Physics
Semiconductor Electronics: Materials,Devices And Simple Circuits
Quiz 4
The thickness of the depletion region is of the order of ___________ of a micrometre.
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one-hundredth
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one-tenth
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one-thousandth
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None of these
Explanation
Depletion region is a region near the p-n junction where flow of charge carriers (free electrons and holes) is reduced over a given period and finally results in zero charge carriers.The width of depletion region which is generally $$1\mu m$$, depends on the amount of impurities added to the semiconductor. Impurities are the atoms (pentavalent and trivalent atoms) added to the semiconductor to improve its conductivity.
hence answer is $$1\mu m$$ and correct option is $$D$$ - none of these.
The zone in a semiconductor diode where no free charge carriers exists is known as the:
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anode region
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cathode region
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depletion region
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None of these
Explanation
In depletion region negative charge carrier electrons are attached with their positive charge carrier holes. hence there is no free charge carriers exists.
Two important processes that occur during the formation of a p-n junction.
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Diffusion
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Drift
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Both drift and diffusion
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Drift in p region and diffusion in n region
Explanation
$$Answer:-$$ C
Three important phenomena occurs during formation of pn junction:-
1) Diffusion
2) Formation of space charge
3) Drift
Which of these is the best description of a Zener diode ?
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It is a constant voltage device.
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It operates in the reverse region.
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It is a constant current device.
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It works in forward region.
Explanation
Zener diode is a p-n junction diode working in the breakdown region. It is used as a voltage regulator/stabilizer to provide a constant voltage from a source whose voltage may fluctuate over a wide range.
Which among the following devices work on the basis of photo-voltaic effect?
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Photo-diode
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Light Emitting Diode (LED)
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Solar Cell
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None of these
Explanation
The photovoltaic effect is the generation of current or voltage in the material when exposed to light. Out of the given options, a photodiode and solar cells work on this effect whereas LED does not.
The creation of voltage or electric current in a material upon exposure to light is termed as
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photo-ionic effect
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thermi-ionic effect
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photo-voltaic effect
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None of these.
Explanation
The generation of current or voltage in a material, when exposed to light is called photovoltaic effect.
The device which operates on this effect is called photo-voltaic device or solar cell. It is a p-n junction diode which converts solar energy into electrical energy.
In a photo-diode,
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photocurrent is proportional to incident light intensity
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photocurrent is inversely proportional to incident light intensity
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photocurrent is independent of the incident light intensity
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incident light intensity is proportional to the photocurrent
Explanation
In a photodiode, photocurrent is directly proportional to intensiy of incident light. More the incident light intensity, more will be the current produced.
The inputs to the digital circuit are shown below. The output Y is.
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$$A+B+\bar{C}$$
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$$(A+B)\bar{C}$$
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$$\bar{A}+\bar{B}+\bar{C}$$
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$$\bar{A}+\bar{B}+{C}$$
Explanation
A and B are inputs to the NAND gate. The output of that gate is $$\overline{(A.B)}=\overline{A}+\overline{B}$$.
The output of C being input to the NOT gate is $$\overline{C}$$.
These two are inputs of OR gate.
Hence $$Y=\overline{(A.B)}+\overline{C}$$
$$=\overline{A}+\overline{B}+\overline{C}$$
If the bandgap between valence band and conduction band in a material is $$0 eV$$, then the material is
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Semiconductor
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Good conductor
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Superconductor
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Insulator
Explanation
In good conductors, the valance band and the conduction band overlap each other resulting in a zero band gap energy. Whereas, bandgap in insulator is nearly $$5 $$ eV and that in semiconductors is nearly $$1.1$$ eV.
Hence the given material is a good conductor.
In an LED device, the intensity of emitted light
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increases continuously with the forward current of the diode.
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increases continuously with the forward current of the diode, reaches a maximum and then decreases.
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decreases continuously with the forward current of the diode.
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decreases continuously with the forward current of the diode, reaches a minimum and then increases.
Explanation
The intensity of emitted light increase with the foreword current more the light intensity.
An intrinsic semiconductor is:
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undoped
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doped
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can be undoped or doped
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semi-doped
Explanation
Doping is a process of adding impurities in a semiconductor. Doped semiconductors are known as extrinsic semiconductors and others are known as intrinsic ones
LEDs have the following advantages over conventional incandescent low power lamps:
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Long life and ruggedness.
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Low operational voltage and less power
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Fast on-off switching capability.
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All of the above
Explanation
LEDs have longer life as compared to incandescent lamps. LED require low operational voltage and less power as compared to incandescent lamps. LEDs also have fast on-off switching capabilities. So, the answer is (d) All of the above.
In which of the following statements, the obtained impure semiconductor is of p-type?
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Germanium is doped with bismuth
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Silicon is doped with antimony
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Germanium is doped with gallium
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Silicon is doped with phosphorus
Explanation
A p-type semiconductor is produced by doping a 14 group element with a 13 group element as 14 group element has 4 valence electron whereas that of group 13 has 3 valence electron. We know that Germanium is a 14 group element and gallium is a 13 group element, thus doping germanium with gallium forms a p-type semiconductor.
In intrinsic semiconductors:
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$$n>p$$
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$$p>n$$
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$$n=p$$
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$$n=0$$
Explanation
Intrinsic semiconductors are pure ones. Hence there is no question of impurity. Valence band is the range of energy of electrons which are in the valence shell of the atoms of a substance. Conduction band is the range of energy of electrons which are free and available for conduction. At room temperature, some electrons of intrinsic semiconductors get excited and reach the conduction band.
During this process, the electrons leave empty spaces in the valence shell. These empty spaces are known as holes in a semiconductor. Number of free electrons (n) is equal to the number of holes (p).
Which of the following is an example of a direct band gap intrinsic semiconductor?
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Silicon
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Germanium
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Gallium Arsenide
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none of these
Explanation
Direct Band gap: Defined when maximum energy in the valence band and minimum energy in the conduction band occurs at the same values of the crystal momentum i.e, a direct transition of electrons from valence to conduction band takes place.
Gallium arsenide is an example of direct band gap semiconductor.
Holes are created when:
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electric discharge causes damage to semicondcutors
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there are too many electrons
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a co-valent bond is broken due to thermal energy, the removal of one electron leaves a vacancy
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none of these
Explanation
Holes are created when a co-valent bond is broken due to thermal energy. The removal of one electron leaves a vacancy known as a hole.
Which of the following statement(s) is/are true about holes?
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They flow from positive terminal to negative terminal
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They flow from negative terminal to positive terminal
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They do not flow
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None of these
Explanation
electrons flow from negative to positive terminal of battery. whenever the electric current flows from positive terminal of battery to negative terminal of battery is called conventional current. the conventional current has same direction of flow of holes but opposite to direction of flow of from electron.
In N-type semiconductors, holes are:
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majority carriers
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minority carriers
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absent
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none of these
Explanation
In an n-type semiconductor, i.e. doped with a pentavalent impurity, atoms have more number of electrons in the conduction band as compare to the number of holes in the valence band. So holes are in minority as compared to electrons which are in majority. So, holes are minority carriers.
In intrinsic semiconductors,:
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holes or electrons are supplied by a foreign atom acting as an impurity
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holes in the valence band are vacancies created by electrons that have been thermally excited to the conduction band
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has high amount of impurities
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none of the above
Explanation
Intrinsic semiconductors are pure ones. Hence there is no question of impurity. Valence band is the range of energy of electrons which are in the valence shell of the atoms of a substance. Conduction band is the range of energy of electrons which are free and available for conduction. At room temperature, some electrons of intrinsic semiconductors get excited and reached the conduction band.
During this process, the electrons leave empty spaces in the valence shell. These empty spaces are known as holes in a semiconductor.
For one electron vacancy,
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no holes are created
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1 hole is created
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2 holes are created
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4 holes are created
Explanation
For one electron vacancy, an empty space or void is created. In order to fill that empty space, a charge carrier with a charge equal in magnitude but opposite polarity should occupy that space in order to maintain electrical neutrality. Such a charge particle is called a hole.
In p-type semiconductors, holes are:
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majority carriers
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minority carriers
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absent
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none of the above
Explanation
P-type semiconductors are those which have a p-type impurity. A p-type impurity is a material in which the atoms have only 3 Valence Electrons. When they are added to a pure semiconductor, each atom gets bonded with 3 of atoms of the semiconductor. Between the 4th atom of the semiconductor and the atom of the impurity, there is an empty space due to lack of an electron. This empty space is known as a hole. Because of a large existence of P-type material in a p-type semiconductor, it has more holes as compared to free electrons. Hence holes are majority carriers.
Diode can work as
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Modulator
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Demodulator
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Rectifier
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Amplifier
Explanation
Diode can work as rectifier,
While converting $$AC$$ voltage to $$DC$$
voltage,
we use $$4$$ diodes in the form of wheat stone bridge,
It effectively works as rectifier.
Therefore option $$C$$ is correct
A semiconductor device is connected in a series circuit with a battery and resistance. A current is found to pass through the circuit. If the polarity of the battery is reversed, the current drops almost to zero. The device may be
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a p-type semiconductor
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an n-type semiconductor
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a p-n junction
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an intrinsic semiconductor
Explanation
Answer:-
A $$P-n$$ junction diode.
Reason:- An ideal diode acts like an open switch when rivers biased and like a closed switch when forward biased.
When an impurity is doped into semiconductor, the conductivity of the semiconductor
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increases
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decreases
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remains same
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becomes zero
Explanation
The pure semiconductor has less number of thermally generated charge carriers. But when it is doped with pentavalent or trivalent impurity atoms, the number of charge carriers i.e. electrons and holes increases. So conductivity increases.
Which of the following is/are correct about the direction of holes/electron?
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Holes are moving along the direction of electric field.
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Electrons are moving along the direction of electric field.
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Electrons are moving against the direction of electric field.
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None of the above
Explanation
An electric field is from positive to negative charges. Due to the electric field, this field exerts a force on holes and electrons. As a result, holes have positive charge and therefore experience a force in the direction of electric field and hence moves in the direction of electric field. And electrons because of the negative charge, move in the opposite direction to the electric field.
In the valance band, the current is due to
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the presence of electrons
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the presence of holes
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the presence of both electrons and holes
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none of the above
Explanation
In the valence band, current is only due to holes. In the conduction band, current is due to electrons.
Digital circuit can be made by repetitive use of this gate-
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AND
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OR
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NOT
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NAND
Explanation
NAND and NOR gates are the basic building blocks of the digital circuit which means that all other gates can be synthesized using NAND (or NOR) gate only.
State whether given statement is True or False
Resistivity of semiconductor depends on atomic nature of semiconductor.
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True
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False
Explanation
Resistivity is a strong function of atomic distance. If the electron is very close to the nucleus, it will be more tightly bound, which means it isn't free to go far. Thus, only valence electrons contribute to current if it is far from the nucleus, it is easier to remove an electron and make it conduct. If it is a big atom (many shells), valence electrons are screened from the nucleus which again makes it easier to remove the electron. Thus reducing resistivity by increasing free carrier density.
The concepts of holes is introduced based on
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the notion that it is a whole lot easier to keep track of the missing particles in an "almost-full" band
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the keeping track of the actual electrons in that band
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the charge of holes
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none of the above
Explanation
The concept of holes was introduced so as to occupy the empty spaces left by the missing electron. For example, in a valence band, when an electron jumps from valence to conduction band, an empty space is created in valence band which is occupied by a hole.
In physics, chemistry, and electronic engineering, _______________ is the lack of an electron at a position where one could exist in an atom or atomic lattice.
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an electron hole
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electron
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proton
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neutron
Explanation
A hole is an absence of an electron in a particular place in an atom. Although it is not a physical particle, a hole can be passed from atom to atom in a semiconductor material.
A semiconductor is a material with a small but non-zero band gap that behaves as an insulator at absolute zero but allows thermal excitation of electrons into its ____________ at temperatures that are below its melting point.
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HOMO
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valence band
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conduction band
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LUMO
Explanation
The band gap in case of semiconductors is of order $$3-4$$ eV. At absolute zero, the valence band is filled and conduction band is empty, so it behaves as an insulator. As the temperature is raised, electrons in the valence band gain sufficient energy to overcome the band gap and jump to the conduction band.
The relationship between band gap energy and temperature can be described by ____________.
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supersymmetric quantum mechanics.
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hyperuniformity.
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phonons theory.
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Varshni's empirical expression.
Explanation
The Varshni's empirical expression gives the relationship between band gap energy and temperature given by:
$$Eg(T)=Eg(0)-\dfrac{\alpha T^{2}}{T+\beta}$$
where,
Eg(0),
α,
β
are material constants.
What will be the input of $$A$$ and $$B$$ for Boolean expression
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$$0,0$$
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$$0,1$$
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$$1,0$$
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$$1,1$$
Explanation
$$\left( \overline { A+B } \right) \left( \overline { A.B } \right) =1$$
Answer
can be formed by trial and error.
$$ (A)(0,0)\Rightarrow A=0,B=0\\ (\overline { 0+0 } )(\overline { 0.0 } )=(\overline { 0 } )(\overline { 0 } )\\ =1.1=1$$
The ________________ determines how electrons respond to forces (via the concept of effective mass).
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electrostatic forces
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dispersion relation
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magnetic force
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lorentz force
Explanation
A dispersion relation is a relation between wave vector (k-vector) and energy in a band. A free electron has a dispersion relation $$\epsilon =\dfrac{h^{2}k^{2}}{2m}$$ where m is the electron mass.
In the conduction band, the dispersion relation is
$$\epsilon =\dfrac{h^{2}k^{2}}{2m^{*}}$$ where m* is the effective mass, so the electron responds to the force as if it had the mass m*.
Which of the following cannot be used in electronic devices?
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Aluminium gallium arsenide
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Indium gallium arsenide
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Gallium arsenide
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Quasicrystals.
Explanation
Aluminum gallium arsenide, indium gallium arsenide, and gallium arsenide are used in Laser diodes, LEDs, whereas Quasicrystals have poor heat conductivity which makes them good insulators, so not used in electronic devices.
The output of AND gate is ____________.
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$$Y=A\cdot B$$
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$$Y=A+B$$
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$$Y=\overline{A+B}$$
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$$Y=\overline{A\cdot B}$$
Explanation
The AND gate gives an output as $$1$$ only when both of its input signals are $$1$$ but gives an output as $$0$$ when both or either of the input signals is $$0$$.
In Boolean algebra, output of AND gate is written as $$Y=A.B$$
When a hole is produced in P-type semiconductor, there is
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Extra electron in valence band
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Extra electron in conduction band
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Missing electron in valence band
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Missing electron in conduction band
Explanation
A hole is not itself a physical quantity but a missing electron in valence band. An electron from adjacent site jumps to fill this hole and thus creates a hole at its former site. So it seems as if the hole itself has moved.
The conductivity of intrinsic semiconductor decreases with increase in temperature.
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True
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False
Explanation
At absolute zero temperature, all the electrons are in the valance band and thus there is no conductance in the intrinsic semiconductors. As we increase the temperature, some of the electrons gain energy and jump into the conductance band and so are responsible for the conductivity in the semiconductor. As we further increase the temperature, more number of electrons from valance band jump into the conductance band resulting in the increase in conductivity of intrinsic semiconductor. Thus the true statement is that the conductivity of intrinsic semiconductor increases with increase in temperature.
Zener-diode is used in.
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Amplification
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Rectification
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Oscillator in producing oscillations
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Volatge regulation
Explanation
A voltage regulator circuit can be designed using a zener diode to maintain a constant DC output voltage across the load in spite of variations in the input voltage or changes in the load current.
The transducer used in television transmission works on the principle of
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Electromagnetic induction
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Photoelectric effect
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Raman's effect
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Rayleigh's effect
Explanation
A transducer is an electronic device that converts light energy to electrical energy in television. When light falls on photosensitive element electric current is generated that is measured directly or after amplification. Similarly, photoelectric effect is the ejection of electrons from a metal or semiconductor surface when illuminated by light or any radiation of suitable wavelength.
In an experiment of photoelectric effect the number of photoelectrons has to be increased without changing their frequency. The suitable step to be taken about the incident radiation for this is
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increasing intensity without changing frequency
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increase both frequency and intensity
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increase frequency without increasing intensity
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increasing only frequency
Explanation
Intensity of photons is the number of photons passing through a cross sectional area per unit time. Hence changing the intensity would cause change in number of ejected photoelectrons emitted by them.
Which of the following symbol represents a universal gate?
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0%
0%
0%
Explanation
A universal gate is that , by which we can get any logical Boolean expression or we can construct any basic gate . In the given gates option B shows a NAND gate , which is a universal gate . Whereas option A is a NOT gate , option C is a OR gate and option D is a AND gate , all three are basic gates .
State whether given statement is True or False
A specially designed P N junction diode converts the solar energy into electrical energy.
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True
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False
Explanation
True. A specially designed P N junction diode converts the solar energy into electrical energy are called photovoltaic solar cells.
A “solar panel” is constructed using individual solar cells, and solar cells are made from layers of silicon semiconductor materials. One layer of silicon is treated with a substance to create an excess of electrons. This becomes the negative or N-type layer. The other layer is treated to create a deficiency of electrons, and becomes the positive or P-type layer similar to transistors and diodes.
When assembled together with conductors, this silicon arrangement becomes a light-sensitive PN-junction semiconductor.
Which gate can be obtained by shorting both the input terminals of a NOR gate?
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NOT
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OR
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AND
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NAND
Explanation
The output of OR gate $$A + B = Y$$
The output of NOR gate
$$\overline {A + B} = Y$$
When, $$A = B$$, then
$$\overline {A + A} = \overline {A} = NOT$$ gate.
The energy gap between the valence band and the condition band for a material is $$6$$eV. The material is?
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an insulator
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a metal
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an intrinsic semiconductor
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a superconductor
Explanation
Insulators have large energy gap between valence and conduction band (about $$6$$eV), while semiconductors have a smaller one and conductors, the smallest energy gap.
Generally semiconductor can be used safely between the temperatures :
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$$-75$$ and $$200$$
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$$0$$ and $$75$$
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$$-25$$ and $$300$$
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$$-40$$ and $$1000$$
Explanation
Semiconductor can be used safely between temperature $$0$$ and $$75$$.
The energy gap in case of which of the following is less than $$3 eV$$?
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Aluminium
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Iron
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Germanium
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Copper
Explanation
Energy gap of most of the semiconductors is nearly $$1.1eV$$ which is less than $$3eV$$.
As we know germanium is a semiconductor and its energy gap is $$0.67eV$$. Thus germanium is the right answer.
Symbolic representation of NOR gate is?
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0%
0%
0%
Explanation
Symbolic representation of NOR gate is.
The schematic symbol of light emitting diode is (LED)
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0%
0%
0%
Explanation
LED is the light emitting diode i.e. it converts the electrical energy into light energy. Therefore the it emits the light out of the diode. Hence, in symbol of LED the outgoing arrows are shown. Thus option B is correct.
In option A symbol has arrows are pointing inwards, hence it represents photodiode. Also, option C represent simple diode and option D represents zener diode.
The circuit given below represents which of the logical operations?
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AND
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NOT
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OR
0%
NOR
Explanation
The circuit can be shown as in figure
The two gates shown are NAND gates
The output of first gate $${ Y }_{ 1 }=\overline { A.B } $$
The output of second gate $$Y=\overline { { Y }_{ 1 }.{ Y }_{ 1 } } =\overline { \overline { A.B } .\overline { A.B } } =\overline { \overline { A.B } } =A.B$$
Thus the given combination behaves as an AND gate.
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