Chemistry - Solid State - Quiz-7

Network solid among the following is -

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SO₂ (solid)
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I₂
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Diamond
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H₂O (ice)

I. Mg(s)

II. TiO (s)

III. I₂ (s)

IV. H₂O (s)

Insulator among the given examples is -

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Only I
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Only II
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III and IV
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II , III and IV

Graphite is a good conductor of electricity due to the presence of ......... .

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Lone pair of electrons.
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Free valence electrons.
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Cations.
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Anions.

Graphite cannot be classified as ...........

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Conducting solid.
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Network solid.
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Covalent solid.
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Ionic solid.

Cations are present in the interstitial sites in ............ .

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Frenkel defect.
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Schottky defect.
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Vacancy defect.
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Metal deficiency defect.

Schottky defect is observed in crystals when -

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Some cations move from their lattice site to interstitial sites.
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Equal number of cations and anions are missing from the lattice.
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Some lattice sites are occupied by electrons.
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Some impurities are present in the lattice.

Chargewise p-type semiconductors is -

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Positive.
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Neutral.
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Negative.
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Depends on the concentration of p impurity.

To get a n -type semiconductor from silicon, it should be doped with a substance with valency -

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2
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1
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3
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5

The total number of tetrahedral voids in the face centred unit cell is -

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6
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8
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10
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12

AgBr(s) crystals shows the following defect/s

I. Schottky defect

II. Frenkel defect

III. Metal excess defect

IV Metal deficiency defect

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I and II
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III and IV
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I and III
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II and IV

Most efficient packing is present in -

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HCP and BCC
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HCP and CCP
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BCC and CCP
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BCC and Simple cubic cell

The percentage of empty space in a body centred cubic arrangement is ......... .

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74
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68
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32
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26

Incorrect statement among the following regarding hexagonal close packing is-

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The coordination number is 12.
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It has 74% packing efficiency.
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Tetrahedral voids of the second layer are covered by the spheres of the third layer.
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In this arrangement spheres of the fourth layer are exactly aligned with those of the first layer.

Same coordination number for cations and anions is present in -

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Cl^- ions form Fcc lattice and Na⁺ ions occupy all octahedral voids of the unit cell.
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Ca²⁺ ions form Fcc lattice and F^- ions occupy all the eight tetrahedral voids of the unit cell.
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O^2- ions form Fcc lattice and Na⁺ ions occupy all the eight tetrahedral voids of the unit cell.
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S^2- ions form Fcc lattice and K⁺ ions go into alternate tetrahedral voids of the unit cell.

The coordination number in a square close packed structure in two dimensions is -

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2
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3
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4
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6

Doping cause -

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Dislocation defects.
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Schottky defects.
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Frenkel defects.
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Electronic defects.

Silicon doped with electron rich impurity forms -

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p-type semiconductor.
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n-type semiconductor.
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Intrinsic semiconductor.
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Insulator.

Incorrect statement among the following is -

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Paramagnetic substances are weakly attracted by magnetic field.
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Ferromagnetic substances cannot be magnetised permanently.
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The domains in antiferromagnetic substances are oppositely oriented with respect to each other.
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Pairing of electrons cancels their magnetic moment in the diamagnetic substances.

A ferromagnetic substance becomes a permanent magnet when it is placed in a magnetic field because-

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All the domains get oriented in the direction of the magnetic field.
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All the domains get oriented in the direction opposite to the direction of the magnetic field.
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Domains get oriented randomly.
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Domains are not affected by the magnetic field.

The correct order of the packing efficiency in different types of unit cells is-

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Fcc < Bcc < Simple cubic
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Fcc > Bcc > Simple cubic
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Fcc < Bcc > Simple cubic
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Bcc < Fcc > Simple cubic

Dislocation defect is also known as-

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Frenkel defect.
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Schottky defect.
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Non-stoichiometric defect.
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Simple interstitial defect.

In the cubic close packing, the unit cell has ......... .

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4 tetrahedral voids each of which is shared by four adjacent unit cells.
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4 tetrahedral voids within the unit cell.
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8 tetrahedral voids each of which is shared by four adjacent unit cells.
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8 tetrahedral voids within the unit cells.

The edge lengths of the unit cells in terms of the radius of spheres constituting fcc, bcc, and simple cubic unit cells are respectively -

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$2 \sqrt{2 r}, \frac{4 r}{\sqrt{3}}, 2 r$
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$\frac{4 r}{\sqrt{3}}, 2 \sqrt{2 r}, 2 r$
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$2 r, 2 \sqrt{2 r}, \frac{4 r}{\sqrt{3}}$
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$2 r, \frac{4 r}{\sqrt{3}}, 2 \sqrt{2 r}$

Correct statement among the following regarding conductivity in solids is -

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$κ_{metals} ≫ κ_{insulators} < κ_{semiconductors}$
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$κ_{metals} ≪ κ_{insulators} < κ_{semiconductors}$
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$κ_{metals}, κ_{semiconductors} > κ_{insulators} = zero$
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$κ_{metals} < κ_{semiconductors} > κ_{insulators} \neq zero$

Incorrect(s) statement among the following

I. Vacancy defect results in a decrease in the density of the substance.

II. Interstitial defects results in an increase in the density of the substance.

III. Impurity defect has effect on the density of the substance.

IV. Frenkel defect results in an increase in the density of the substance.

Choose the correct option

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(I, II)
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(II, III)
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(III, IV)
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(I, IV)

Consider the following statements about semiconductor.:

I. Silicon doped with electron-rich impurity is a p-type semiconductor.

II. Silicon doped with an electron-rich impurity is an n-type semiconductor.

III. Delocalised electrons increase the conductivity of doped silicon.

IV. An electron vacancy increases the conductivity of n-type semiconductor.

The correct statement about semiconductors is -

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(I, II)
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(II, III)
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(III, IV)
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(I, IV)

A compounds that can show both, Frenkel as well as Schottky defects is -

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AgBr
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AgI
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NaCl
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ZnS

Structure of a mixed oxide is cubic close-packed (CCP). The cubic unit cell of mixed oxide is composed of oxide ions. One fourth of the tetrahedral voids are occupied by divalent metal A and the octahedral voids are occupied by a monovalent metal B. The formula of the oxide is -

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$A_{2} B O_{2}$
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$A_{2} B_{3} O_{4}$
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$A B_{2} O_{2}$
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4 $A B O_{2}$

A solid compound XY has NaCl structure. If the radius of the cation is 100 pm, the radius of the anion (Y^–) will be-

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165.7 pm
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175.1 pm
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322.5 pm
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241.5 pm

The pyknometric density of sodium chloride crystal is 2.165 × 10³ kg m^–3 while its X-ray density is 2.178 × 10³ kg m^–3. The fraction of unoccupied sites in sodium chloride crystal is :

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5.96
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5.96 × 10^–2
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5.96 × 10^–1
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5.96 × 10^–3

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Practice Chemistry Quiz Questions and Answers

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Practice Chemistry Quiz Questions and Answers

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